Modeling of Cu IMD-TDDB caused by extrinsic defects

Author

Ouchi, T. ; Makabe, K. ; Ogasawara, M. ; Murakami, E. ; Yoshioka, N.

Author_Institution

Yield Manage./Process & Device Anal. Eng. Dev. Dept., Renesas Technol. Corp., Hitachi, Japan

fYear

2010

fDate

2-6 May 2010

Firstpage

120

Lastpage

124

Abstract

In this paper, a prediction method for degradation failure ratio (B-mode) of Cu IMD-TDDB is studied. In this study, B-mode failure is assumed to be caused by dielectric thinning due to random defects (thinning model). Its probability is calculated by Critical Area Analysis (CAA). Prediction is in good agreement with measurement results. This method can be applied to estimate reliability of various LSI products.

Keywords

copper; electric breakdown; failure analysis; integrated circuit modelling; integrated circuit reliability; large scale integration; B-mode failure prediction method; CAA; Cu; IMD-TDDB modeling; LSI products reliability; critical area analysis; degradation failure ratio prediction method; dielectric thinning; extrinsic defects; inter-metal dielectrics; time dependent dielectric breakdown; Breakdown voltage; Computer aided analysis; Degradation; Dielectric measurements; Engineering management; Failure analysis; Large scale integration; Predictive models; Surface treatment; Testing; Critical Area Analysis; LSI; Reliability; TDDB; degradation failure; random defects; thinning model;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488843

Filename

5488843