Title :
Modeling of Cu IMD-TDDB caused by extrinsic defects
Author :
Ouchi, T. ; Makabe, K. ; Ogasawara, M. ; Murakami, E. ; Yoshioka, N.
Author_Institution :
Yield Manage./Process & Device Anal. Eng. Dev. Dept., Renesas Technol. Corp., Hitachi, Japan
Abstract :
In this paper, a prediction method for degradation failure ratio (B-mode) of Cu IMD-TDDB is studied. In this study, B-mode failure is assumed to be caused by dielectric thinning due to random defects (thinning model). Its probability is calculated by Critical Area Analysis (CAA). Prediction is in good agreement with measurement results. This method can be applied to estimate reliability of various LSI products.
Keywords :
copper; electric breakdown; failure analysis; integrated circuit modelling; integrated circuit reliability; large scale integration; B-mode failure prediction method; CAA; Cu; IMD-TDDB modeling; LSI products reliability; critical area analysis; degradation failure ratio prediction method; dielectric thinning; extrinsic defects; inter-metal dielectrics; time dependent dielectric breakdown; Breakdown voltage; Computer aided analysis; Degradation; Dielectric measurements; Engineering management; Failure analysis; Large scale integration; Predictive models; Surface treatment; Testing; Critical Area Analysis; LSI; Reliability; TDDB; degradation failure; random defects; thinning model;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488843
