DocumentCode
2699931
Title
High-resistivity silicon p-i-n diodes for detection of ionising radiation
Author
Slysz, W. ; Ryc, L. ; Wegrzecki, M.
Author_Institution
Inst. of Electron. Technol., Warsaw
fYear
2000
fDate
2000
Firstpage
461
Lastpage
464
Abstract
Silicon p-i-n photodiodes for measuring nuclear radiation, with a large surface area (5×5 mm2), a thick (380 μm) active layer and a very thin dead layer (0.13 μm), have been fabricated by diffusion from a boron doped silicon layer (BDS). The photodiodes have been tested using α-particles from 241Am and X-rays from laser plasmas
Keywords
X-ray detection; alpha-particle detection; p-i-n photodiodes; silicon radiation detectors; α-particles; 0.13 mum; 380 mum; 241Am; Si; Si p-i-n photodiodes; Si:B layer; X-rays; diffusion; high-resistivity p-i-n diodes; ionising radiation detection; large surface area; laser plasmas; nuclear radiation; p+-ν-n+ structure; thick active layer; very thin dead layer; Area measurement; Boron; Nuclear measurements; P-i-n diodes; PIN photodiodes; Plasma x-ray sources; Silicon; Testing; Thickness measurement; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location
Smolenice
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889545
Filename
889545
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