Title :
Understanding noise measurements in MOSFETs: the role of traps structural relaxation
Author :
Veksler, D. ; Bersuker, G. ; Rumyantsev, S. ; Shur, M. ; Park, H. ; Young, C. ; Lim, K.Y. ; Taylor, W. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
The presented theoretical analysis of random telegraph signal (RTS) and 1/f noise data provides consistent interpretation of the measurement results allowing trap characteristics to be extracted and the atomic structure of oxide traps to be identified. We emphasize the critical role of the lattice structural relaxation associated with charge trapping/detrapping, which represents one of the major factors controlling electron capture/emission times.
Keywords :
MOSFET; electron capture; noise measurement; telegraphy; MOSFET; charge trapping-detrapping; electron capture-emission times; noise measurements; oxide traps; random telegraph signal; traps structural relaxation; Atomic measurements; Data mining; Electron traps; Lattices; MOSFETs; Noise measurement; Radioactive decay; Signal analysis; Signal processing; Telegraphy; Electrical noise; MOSFET characterization; configurational relaxation of traps; random telegraph signal;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488850
