GaInNAs/GaAs quantum wells: Advantages for SOAs

Author

Rorison, J.M. ; Pozo, J. ; Wong, H.C. ; Qiu, Y.N. ; Vogiatis, N. ; Alexandopolos, D. ; Konttinen, J. ; Saarinen, M. ; Jouhti, T. ; Pessa, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bristol Univ.

Volume

2

fYear

2006

fDate

18-22 June 2006

Firstpage

150

Lastpage

150

Abstract

GaInNAs/GaAs quantum wells are a relatively new material system for telecom/data com application. Generally it has been thought that the material offers an improved temperature performance and lattice matching to GaAs both significant advances. However studies of the material show that it has more parameters to control: in particular controlling the N distribution within the QW and the nature of the N states- single, pair states or cluster states allows tunability of the band gap, conduction band effective mass and quantum-dot-like localised states. These features offer a number of new device applications which will be discussed in this talk

Keywords

III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; indium compounds; localised states; optical communication equipment; optical materials; semiconductor optical amplifiers; semiconductor quantum wells; wide band gap semiconductors; GaInNAs-GaAs; GaInNAs/GaAs quantum wells; SOA; band gap; conduction band effective mass; quantum-dot-like localised states; Conducting materials; Data engineering; Effective mass; Gallium arsenide; Lattices; Photonic band gap; Telecommunication control; Temperature; Weight control;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2006 International Conference on

Conference_Location

Nottingham

Print_ISBN

1-4244-0235-2

Electronic_ISBN

1-4244-0236-0

Type

conf

DOI

10.1109/ICTON.2006.248360

Filename

4013756