Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs

Author

Chini, A. ; Rajan, S. ; Wong, M. ; Fu, Y. ; Speck, J.S. ; Mishra, U.K.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Univ. di Modena

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

63

Lastpage

64

Abstract

The paper reports on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3 Ohm/mm was achieved. The devices were then characterized before and after SiN passivation. Before passivation, large current dispersion was observed in 80mus pulsed I-V measurements compare to the DC I-V curves. The adoption of a SiN passivation layer improved the I-V pulsed characteristics at 80mus but current dispersion was still severe when using shorter (200ns) pulse widths

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; ohmic contacts; passivation; semiconductor device metallisation; silicon compounds; wide band gap semiconductors; 1.3 ohm; AlGaN-GaN-AlGaN; HEMT; SiN; current dispersion; high electron mobility transistors; ohmic contact optimization; passivation layer; Aluminum gallium nitride; Fabrication; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Passivation; Pulse measurements; Silicon compounds; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553056

Filename

1553056