The incorporation of copper in CVD aluminum by diffusion from in-situ sputtered sources

Author

Kwakman, L.F.Tz. ; Huibregtse, D. ; Piekaar, H.W. ; Granneman, E.H.A. ; Cheung, K.P. ; Case, C.J. ; Lai, W.Y.-C. ; Liu, R. ; Schutz, R.J. ; Wagner, R.S.

Author_Institution

ASMI-AMTC, Bilthoven, Netherlands

fYear

1990

fDate

12-13 Jun 1990

Firstpage

282

Lastpage

288

Abstract

It is demonstrated that in-situ sputtered Cu-containing films serve as excellent diffusion sources for chemical vapor deposited (CVD) Al at temperatures as low as 230°C. Pure Cu, Al-2 wt.% Cu, and Al-0.5 wt.% Cu were used as the source film. Rutherford backscattering spectroscopy (RBS) was used to determine the film grain structures. It was found that the diffusion of Cu from the in-situ Cu-Al film is unhindered by the CVD process and reaches a concentration approximately that of the solid solubility in the CVD Al. A maximum of 0.37 wt.% of the Cu is incorporated into the CVD film from a sputtered pure Cu source. This should provide adequate electromigration resistance for the CVD Al

Keywords

CVD coatings; Rutherford backscattering; VLSI; aluminium; aluminium alloys; copper; metallisation; 230 degC; CVD; Cu-Al; Cu-AlCu; Rutherford backscattering spectroscopy; diffusion sources; electromigration resistance; film grain structures; in-situ sputtered sources; solid solubility; Aluminum alloys; Backscatter; Copper alloys; Doping; Electromigration; Inductors; Metallization; Sputtering; Temperature; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127878

Filename

127878