The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate. In this work we analyze the single defects constituting NBTI. We introduce a new measurement technique stimulating a charging of these defects. By employing a statistical analysis of many stochastic stimulation processes of the same defect we are able to determine the electric field and the temperature dependence of these defects with great precision. Based on our experiments we present and verify a new, physics-based, quantitative model allowing a precise prediction of NBTI degradation and recovery. This model takes the stress history into account and also provides a prediction for degradation due to AC-NBTI and an understanding of the special features seen in conjunction with AC-NBTI.