DocumentCode
2700479
Title
The prospects for 10 nm III-V CMOS
Author
del Alamo, J.A. ; Kim, D.H.
Author_Institution
Microsyst. Technol. Labs., MIT, Cambridge, MA, USA
fYear
2010
fDate
26-28 April 2010
Firstpage
166
Lastpage
167
Abstract
The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects and the challenges for a III-V CMOS technology with gate lengths in the 10 nm range.
Keywords
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; silicon; III-V CMOS technology; III-V compound semiconductors; Si; channel materials; electron transport property; size 10 nm; CMOS logic circuits; CMOS technology; Electrons; HEMTs; III-V semiconductor materials; Indium gallium arsenide; MODFETs; MOSFETs; Power system reliability; Quantum capacitance;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-5063-3
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2010.5488901
Filename
5488901
Link To Document