Silicides as new electrode/heater for compact integration of phase change memory with CMOS

Author

Fang, Lina Wei-Wei ; Zhao, Rong ; Yeo, Eng-Guan ; Lim, Kian-Guan ; Yang, Hongxin ; Shi, Luping ; Chong, Tow-Chong ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2010

fDate

26-28 April 2010

Firstpage

138

Lastpage

139

Abstract

We report the first demonstration of phase change memory cells utilizing nickel monosilicide (NiSi) or platinum monosilicide (PtSi) as the bottom electrode or heater material. This work enables the integration of PCRAM directly on the silicided drain regions of MOSFETs, allowing compact integration with reduced process complexity and cost. Low reset current of 0.8 mA was achieved for contact dimensions of ~ 1 μm. Electrical and simulation results demonstrate the feasibility of employing silicides as a bottom electrode/heater in a PCRAM.

Keywords

CMOS integrated circuits; electrodes; phase change memories; CMOS; bottom electrode; electrode/heater; heater material; phase change memory; silicides; Contacts; Costs; Electrodes; MOSFETs; Nickel; Phase change materials; Phase change memory; Phase change random access memory; Platinum; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488913

Filename

5488913