Variability analysis of TiN FinFET SRAM cell performance and its compensation using Vth-controllable independent double-gate FinFET

Author

Endo, Kazuhiko ; O´Uchi, Shin-Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2010

fDate

26-28 April 2010

Firstpage

124

Lastpage

125

Abstract

Variability of the TiN FinFET SRAM cell performance is comprehensively studied. It is found that the static noise margin (SNM) variation of the SRAM cell is due to the V_th variation of FinFETs caused by the work function variation (WFV) of the TiN metal-gate. It is experimentally demonstrated that the V_th-controllable independent-double-gate (IDG) FinFET technology successfully compensates not only the random variation but also the systematic variation problems in SRAM performance. As a result, IDG-FinFET technology enables 0.5 V SRAM operation with a high cell stability.

Keywords

MOSFET; SRAM chips; compensation; titanium compounds; SRAM operation cell stability; TiN; TiN FinFET SRAM cell performance; TiN metal-gate; compensation; static noise margin variation; systematic variation problems; variability analysis; voltage 0.5 V; voltage-controllable independent double-gate FinFET technology; work function variation; Cache memory; Control systems; FinFETs; MOSFET circuits; Nanoelectronics; Nanoscale devices; Performance analysis; Random access memory; Stability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488919

Filename

5488919