DocumentCode
2700835
Title
A thermally stable salicide process using N2 implantation into TiSi2
Author
Nishiyama, A. ; Akasaka, Y. ; Ushiku, Y. ; Hishioka, K. ; Suizu, Y. ; Shiozaki, M.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1990
fDate
12-13 Jun 1990
Firstpage
310
Lastpage
316
Abstract
TiSi2 is an appropriate candidate for the self-aligned silicide (salicide) process. However, it degrades morphologically and the film sheet resistance increases during high-temperature annealing. A thermally stable salicide process using N2 implantation into TiSi2 has been developed in order to retard this phenomenon. The morphology of the TiSi2 film and the film sheet resistance were evaluated as a function of implanted N2 dose after high-temperature annealing. The sample which received the highest dose exhibited the best film morphology, while there is an optimum dose for maintaining the film sheet resistance at its maximum value. The dependence of sheet resistance on implanted N2 dose is discussed in terms of agglomeration, film composition, and implantation damage. A successful application to a submicron MOS transistor is presented
Keywords
annealing; insulated gate field effect transistors; metallisation; nitrogen; titanium compounds; TiSi2:N2; agglomeration; film composition; film morphology; film sheet resistance; high-temperature annealing; implantation damage; self-aligned silicide; submicron MOS transistor; Annealing; Glass; MOSFETs; Morphology; Nitrogen; Semiconductor films; Temperature; Tin; Titanium; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location
Santa Clara, CA
Type
conf
DOI
10.1109/VMIC.1990.127882
Filename
127882
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