Title :
A novel concept for field-effect transistors - the tunneling carbon nanotube FET
Author :
Knoch, J. ; Appenzeller, J.
Keywords :
CMOS technology; CNTFETs; Energy consumption; FETs; Integrated circuit technology; Nanoscale devices; Probability distribution; Temperature; Tunneling; Voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553099
