• DocumentCode
    2701236
  • Title

    Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric

  • Author

    Zhao, Wei ; Seabaugh, Alan ; Winstead, Brian ; Jovanovic, Dejan ; Adams, Vance

  • Author_Institution
    Dept. of Electr. Eng., Notre Dame Univ., IN
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    199
  • Lastpage
    200
  • Abstract
    In this paper, we report the first investigation of the influence of uniaxial tensile strain on the gate tunneling current in advanced partially-depleted silicon-on-insulator (PD-SOI) MOSFETs. We have also studied, for the first time, the impact of uniaxial strain on the static leakage current of ring oscillators (RO) fabricated in this technology
  • Keywords
    MOSFET; dielectric materials; oscillators; silicon-on-insulator; PD-SOI MOSFET; gate leakage currents; ring oscillators; ultra thin gate dielectric; uniaxial strain; Capacitive sensors; Dielectrics; Gate leakage; Leakage current; MOSFET circuits; Ring oscillators; Tensile strain; Tunneling; Uniaxial strain; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553119
  • Filename
    1553119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2701236