Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories

Author

Molas, G. ; Bocquet, M. ; Colonna, J.P. ; Vidal, V. ; Kies, R. ; Grampeix, H. ; Martin, F. ; Papon, A.M. ; Dansas, H. ; Brianceau, P. ; Licitra, C. ; Barnes, J.P. ; Pananakakis, G. ; Ghibaudo, G. ; De Salvo, B.

Author_Institution

CEA-LETI MINATEC, Grenoble, France

fYear

2010

fDate

26-28 April 2010

Firstpage

56

Lastpage

57

Abstract

In this work we present the integration of Band Engineered TANOS-like memories using HfSiON in the tunnel stack to boost the programming efficiency and improve cycling. An accurate correlation analysis between the gate-stack material physical properties and the memory performances is presented. In particular, the importance of the nitridation step of HfSiON on the memory retention characteristics at high temperature is suggested.

Keywords

alumina; correlation methods; elemental semiconductors; hafnium compounds; integrated circuit reliability; random-access storage; silicon; silicon compounds; tantalum compounds; HfSiON; TANOS memory reliability; TaN-Al₂O₃-Si₃N₄-SiO₂-Si; band engineered TANOS-like memory reliability; correlation analysis; gate-stack material physical property; layered HfSiON-based tunnel stacks; memory retention characteristics; voltage reduction; Decision support systems; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488949

Filename

5488949