Abstract :
Extreme Ultraviolet Lithography (EUVL) is a promising candidate for the device fabrication at feature sizes of a half pitch of 32 nm and below. An EUV lithography system (Fig. 1) is composed of various subsystems, such as the source, the optics, the exposure system, a mask, and the resist. Currently various consortia, private companies, universities, and research institutes are working on the development of EUV lithography in Japan. EUVA and Selete are involved in an EUVL-related NEDO project under MIRAI Scheme. The recent activities of those projects are described in this presentation.
Keywords :
masks; resists; ultraviolet lithography; EUV lithography development; MIRAI scheme; NEDO project; extreme ultraviolet lithography; mask; resist; Lithography; Nonhomogeneous media; Optical materials; Optical sensors; Particle beam optics; Plasma materials processing; Plasma sources; Resists; Stimulated emission; Ultraviolet sources;
