DocumentCode :
270143
Title :
A Method to Design SEC-DED-DAEC Codes With Optimized Decoding
Author :
Reviriego, Pedro ; Martínez, Jorge ; Pontarelli, Salvatore ; Maestro, Juan Antonio
Author_Institution :
Univ. Antonio de Nebrija, Madrid, Spain
Volume :
14
Issue :
3
fYear :
2014
fDate :
Sept. 2014
Firstpage :
884
Lastpage :
889
Abstract :
Single error correction-double error detection-double adjacent error correction (SEC-DED-DAEC) codes have been proposed to protect SRAM devices from multiple cell upsets (MCUs). The correction of double adjacent errors ensures that the most common types of MCUs are corrected. At the same time, SEC-DED-DAEC codes require the same number of parity check bits as traditional SEC-DED codes. The main overhead associated with SEC-DED-DAEC codes is the increase in decoding complexity that can impact access time and circuit power and area. In this paper, a method to design SEC-DED-DAEC codes with optimized decoding is presented and evaluated. The proposed scheme starts by setting some constraints on the parity check matrix of the codes. Those constraints are then used to simplify the decoding. The proposed scheme has been implemented and evaluated for different word-lengths. The results show that, for data words of 32 bits, the scheme can be implemented with the same number of parity check bits as SEC-DED codes. For 16 and 64 bits words, an additional parity check bit is required, making the scheme less attractive. With the proposed method, the decoders can be optimized for area or speed. Both implementations are evaluated and compared with existing SEC-DED-DAEC decoders. The results show that the proposed decoders reduce significantly the circuit area, power, and delay.
Keywords :
SRAM chips; decoding; error correction codes; parity check codes; MCU; SEC-DED-DAEC codes; SEC-DED-DAEC decoders; SRAM devices; decoding complexity; double adjacent error correction codes; double error detection codes; multiple cell upsets; optimized decoding; parity check bits; parity check matrix; single error correction codes; storage capacity 16 bit; storage capacity 32 bit; storage capacity 64 bit; Complexity theory; Decoding; Delays; Error correction codes; Logic gates; Materials reliability; Parity check codes; Multiple Cell Upsets (MCUs); SEC-DAEC codes; SRAM memories; error correction codes;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2014.2332364
Filename :
6853326
Link To Document :
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