Title :
A new step in GeOI pFET scaling and Off-State current reduction: 30nm gate length and record ION/IOFF ratio
Author :
Hutin, L. ; Le Royer, Cyrille ; Damlencourt, J. -F ; Hartmann, J. -M ; Grampeix, H. ; Mazzocchi, V. ; Arvet, C. ; Tabone, C. ; Previtali, B. ; Loup, V. ; Roure, M.-C. ; Pouydebasque, A. ; Lafond, D. ; Vinet, M. ; Clavelier, L. ; Faynot, O.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
We demonstrate the shortest Ge-channel pFETs reported to date (Lg=30 nm), on Ultra Thin GeOI obtained with the Ge enrichment technique. The Ion/Ioff ratio is raised to a record value of more than 5 decades thanks to the combination of a low defectivity, a thin Ge layer, well-controlled VΛ and SCE. This ratio could be even further improved using of germanidation, raised S/D, no channel doping, and decreasing the Ge film thickness in order to operate in full depletion at shorter gate lengths.
Keywords :
elemental semiconductors; field effect transistors; germanium; Ge; Ge enrichment technique; Ge film thickness; Ge-channel pFET; gate length; germanidation; germanium-on-insulator pFET; off-state current reduction; record ION-IOFF ratio; size 30 nm; ultra thin GeOI pFET; Annealing; Argon; Degradation; Delay; Doping; Germanium; Microstrip; Scalability; Silicon; Substrates;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488958
