Title :
A complementary high current gain transistor for use in a CMOS compatible technology
Author :
Verdonckt-Vandebroek, Sophie ; Woo, Jason C S ; Wong, S. Simon
Author_Institution :
Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The authors present a BJT (bipolar junction transistor) which is fabricated using a bulk CMOS technology. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral BJT. Complementary NPN and PNP BJTs with a current gain higher than 1000 are presented. Because of the moderate cutoff frequency (i.e., fT<5 GHz), the proposed BJT will mainly be used in BiCMOS processes for medium-speed, mostly CMOS, analog/digital applications
Keywords :
BIMOS integrated circuits; bipolar transistors; integrated circuit technology; 5 GHz; BiCMOS processes; CMOS compatible technology; MOSFET; NPN BJT; PNP BJTs; bipolar junction transistor; complementary high current gain transistor; current gain; cutoff frequency; lateral BJT; BiCMOS integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Implants; Interface states; Joining processes; MOSFET circuits; Ohmic contacts; Quasi-doping;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1990.171132
