Title :
Leading edge foundry Si-based RF technology for wireless communication
Author :
Tseng, H.C. ; Hua, W.-C. ; Chen, C.H. ; Ho, C.C.
Author_Institution :
R&D, Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
Abstract :
As CMOS technology advances with increasingly scaled-down chip size and better MOSFET performance, new challenges and opportunities are observed in the innovation and optimization of integrated RF device for state-of-the-art RF system-on-chip (RFSOC). From technology foundry´s viewpoint, this paper illustrates the essence of key RF SOC active and passive devices.
Keywords :
CMOS integrated circuits; MOSFET; foundries; radiofrequency integrated circuits; system-on-chip; CMOS technology; RF system-on-chip; RF technology; integrated RF device; leading edge foundry; wireless communication; CMOS technology; Capacitance; Communications technology; Foundries; Inductors; Message-oriented middleware; Metal-insulator structures; Radio frequency; Resistors; Wireless communication;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488965
