DocumentCode :
27016
Title :
Investigation of class J continuous mode for high-power solid-state RF amplifier
Author :
Jain, Abhishek ; Hannurkar, P.R. ; Pathak, Saket Kumar ; Sharma, D.K. ; Gupta, Amit Kumar
Author_Institution :
RF Syst. Div., Raja Ramanna Centre for Adv. Technol., Indore, India
Volume :
7
Issue :
8
fYear :
2013
fDate :
June 5 2013
Firstpage :
686
Lastpage :
692
Abstract :
The class J design space is investigated with half wave current excitation for a solid-state RF amplifier capable of delivering hundreds of watts. Unlike conventional class J designs, the present analysis aims to explore a continuous design space in order to operate a commercially available device, within its practical limits of drain voltage. This design analysis together with package effects and the inclusion of non-linear capacitor is verified experimentally by fabricating a high-power (550 W CW) high-efficiency (62.8%) solid-state amplifier operating at 505.8 MHz. This power was obtained by in-phase combining two similar continuous class J stages, each one contributing half of the total power. For high-power lateral diffused metal-oxide semiconductor devices, the class J design space is found to be more realisable than popular modes of operation in view of the large non-linear output capacitance of the device. The measured output power, efficiency, spurious response and large signal output reflection coefficients are satisfactory and as anticipated from the design analysis. Since the final application of this amplifier is for a solid-state transmitter, a study of repeatability in terms of phase and amplitude imbalances was carried out by fabricating and evaluating multiple amplifiers, each one working with the proposed design principle.
Keywords :
MOS integrated circuits; UHF power amplifiers; capacitors; integrated circuit design; integrated circuit packaging; microwave integrated circuits; transmitters; amplitude imbalance; class J continuous mode; drain voltage; efficiency 62.8 percent; frequency 505.8 MHz; half wave current excitation; high-power lateral diffused metal-oxide semiconductor device; high-power solid-state RF amplifier; nonlinear output capacitance; package effect; phase imbalance; power 550 W; signal output reflection coefficient; solid-state transmitter;
fLanguage :
English
Journal_Title :
Microwaves, Antennas & Propagation, IET
Publisher :
iet
ISSN :
1751-8725
Type :
jour
DOI :
10.1049/iet-map.2012.0649
Filename :
6553627
Link To Document :
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