DocumentCode
2701680
Title
New HEMT structures for THz applications
Author
Cappy, A. ; Widimann, N. ; Bollaert, S. ; Wallart, X. ; Knap, W.
Author_Institution
IEMN-DHS, Villeneuve d´´Aseq
Volume
1
fYear
2005
fDate
22-22 June 2005
Firstpage
255
Lastpage
256
Abstract
THz radiations present a great interest for applications in different fields ranging from telecommunications to sensors for biology and medicine. This paper reviews two new field effect devices especially suited for THz applications: double-gate HEMTs (DG-HEMT) and plasma wave transistors
Keywords
high electron mobility transistors; semiconductor plasma; submillimetre wave transistors; THz radiations; double-gate HEMT; field effect devices; plasma wave transistors; Cutoff frequency; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Plasma waves; Substrates; Transconductance; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553145
Filename
1553145
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