Title :
Copper-parylene interactions in multilevel interconnection structures
Author :
McDonald, J.F. ; Dabral, S. ; Yang, G.R. ; Bakhru, H. ; Lu, T.-M.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Copper is investigated as an interconnect metal and parylene as the interlayer dielectric. It has been found that copper adheres to the parylene well. The effect of a soldering step has been simulated by annealing. Using Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS) it has been found that copper does indeed diffuse into the parylene at elevated temperatures. However, this diffusion is small and does not affect the dielectric leakage properties much
Keywords :
Rutherford backscattering; annealing; chemical interdiffusion; copper; dielectric thin films; metallisation; secondary ion mass spectroscopy; Cu; Rutherford backscattering; annealing; dielectric leakage properties; interconnect metal; interlayer dielectric; multilevel interconnection structures; parylene; secondary ion mass spectroscopy; soldering step; Adhesives; Copper; Crystals; Dielectrics; Lead; Simulated annealing; Soldering; Stress; Temperature; Testing;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127892
