DocumentCode
2701900
Title
Design and fabrication of the spin-photodiode based on non-magnetic III-V semiconductor heterostructures
Author
Kondo, T. ; Hayafuji, J. ; Munekata, H.
Author_Institution
Imaging Sci. & Eng. Lab., Tokyo Inst. of Technol., Yokohama
Volume
2
fYear
2005
fDate
22-22 June 2005
Firstpage
6
Lastpage
7
Abstract
In this paper, the authors propose a spin-photodiode (spin-PD) that can convert directly the magnitude of circular polarization of incident light into an electric analog signal. This novel device makes it possible to simplify the optical system based on circularly polarized light, such as the optical-chirality detection for organic compounds and stress detection in the solid objects. We show experimentally the device characteristics of III-V-based spin-PD, and discuss that the spin-PD operates as we expected from the model calculations
Keywords
III-V semiconductors; chirality; electron spin polarisation; photodiodes; III-V semiconductors; circular polarization; electric analog signal; optical-chirality detection; spin-photodiodes; Diodes; Electrons; Fabrication; III-V semiconductor materials; Object detection; Optical devices; Optical polarization; P-n junctions; Photoconductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553158
Filename
1553158
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