Title :
A CRYO-BiCMOS technology with Si/SiGe heterojunction bipolar transistors
Author :
Imai, K. ; Yamazaki, T. ; Tashiro, T. ; Tatsumi, T. ; Niino, T. ; Aizaki, N. ; Nakamae, M.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A high-performance liquid-nitrogen temperature BiCMOS (CRYO-BiCMOS) technology with Si/SiGe heterojunction bipolar transistors (HBTs) is presented. The newly developed HBT, which has an n+-polysilicon/n-type Si epitaxial layer emitter structure on a p-type SiGe base layer, shows a high current gain of 50 at liquid nitrogen temperature. Under the conditions of 3.3 V and 83 K, the driving capability of CRYO-BiCMOS gates is two times larger than that of the CRYO-CMOS gate. At 3.3 V and a load capacitance of 1 pF, the gate delay of CRYO-BiCMOS gate with pull-up HBT is 480 ps. The CRYO-BiCMOS with Si/SiGe HBTs presented is very promising for the future progress of BiCMOS LSIs
Keywords :
BIMOS integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; integrated circuit technology; low-temperature techniques; silicon; 1 pF; 3.3 V; 480 ps; 83 K; CRYO-BiCMOS technology; HBT; Si-SiGe heterojunction bipolar transistors; current gain; driving capability; gate delay; load capacitance; n+-polysilicon/n-type Si epitaxial layer emitter structure; BiCMOS integrated circuits; Bipolar transistors; Degradation; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; National electric code; Silicon germanium; Temperature; Threshold voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1990.171134
