Low internal loss GaInNAs laser diode with InGaAs/GaNAs/GaAs barrier

Author

Maskuriy, F. ; Alias, M.S. ; Mitani, S.M. ; Manaf, A.A.

Author_Institution

Microelectron. & Nanotechnol., Telekom Res. & Dev, TM Innovation Centre, Cyberjaya, Malaysia

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

We investigate the performance of GaInNAs broad area laser diode at room temperature when the InGaAs and GaNAs barrier configuration is applied to the quantum well system in the active region. The simulation software PICS3D is used in this work. By plotting the light versus the current curve, we can extract the differential quantum efficiency, η_d and internal quantum efficiency, η_i for the laser. The internal loss of the laser is then determined by plotting the slope of the linear fit line to the inverse of external differential quantum efficiency versus cavity length data points. The inverse slope of the efficiency versus cavity length plot shows that the laser exhibits low internal loss of 2.8cm^-1 with η_i of 58%. This shows good simulation result of GaInNAs laser diode.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical losses; physics computing; quantum well lasers; wide band gap semiconductors; GaInNAs-InGaAs-GaNAs-GaAs; PICS3D software; barrier configuration; broad area laser diode; cavity length; current curve; differential quantum efficiency; inverse slope efficiency; low internal loss laser diode; quantum well system; temperature 293 K to 298 K; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Laser applications; Laser beams; Nitrogen; Semiconductor lasers; GaInNAs; long wavelength lasers; quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2011 IEEE 2nd International Conference on

Conference_Location

Kata Kinabalu

Print_ISBN

978-1-61284-265-3

Electronic_ISBN

978-1-61284-263-9

Type

conf

DOI

10.1109/ICP.2011.6106823

Filename

6106823