• DocumentCode
    2701968
  • Title

    Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz fT and 184 GHz fmax

  • Author

    Higashiwaki, M. ; Matsui, T. ; Mimura, T.

  • Author_Institution
    Nat. Inst. of Inf. & Commun. Technol., Tokyo
  • Volume
    2
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    In conclusion, we demonstrated AlGaN/GaN HFETs with fT=163 GHz and fmax=184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography
  • Keywords
    III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; high electron mobility transistors; passivation; silicon compounds; wide band gap semiconductors; 163 GHz; 184 GHz; 60 nm; AlGaN-GaN; Cat-CVD SiN insulated-gate AlGaN/GaN HFET; EB lithography; SiN; high-Al-composition barrier layers; passivation layers; Aluminum gallium nitride; Gallium nitride; Gold; HEMTs; Insulation; Intrusion detection; Lithography; MODFETs; Passivation; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553161
  • Filename
    1553161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2701968