DocumentCode :
2702125
Title :
Aluminum nitride packaging
Author :
Ishida, Masanobu ; Hasegawa, Tomohide ; Iwaida, Toshihiro ; Knudsen, Ame
Author_Institution :
R&D Center, Kyocera Corp., Japan
fYear :
1999
fDate :
14-17 Mar 1999
Firstpage :
133
Lastpage :
135
Abstract :
Due to its high thermal conductivity (TC) and a low thermal expansion coefficient, which is comparable to that of Si, aluminum nitride (AlN) has been adopted for packages requiring high thermal dissipation. Kyocera has been conducting research and development on AlN for more than ten years, and has produced many kinds of AlN products, such as Cer-Quad and multilayer packages, in addition to thin film substrates. We have developed a novel low-temperature co-fireable AlN composition (AN75W) to reduce cost. In this paper, we describe the thermal properties of the AN75W material, with a brief description of the general characteristics of packages produced with this ceramic
Keywords :
aluminium compounds; ceramic packaging; cooling; thermal conductivity; thermal expansion; thermal management (packaging); AN75W material; AlN; AlN packages; AlN product; Cer-Quad packages; aluminum nitride; aluminum nitride packaging; ceramic packages; low-temperature co-fireable AlN composition; multilayer packages; package characteristics; thermal conductivity; thermal dissipation; thermal expansion coefficient; thermal properties; thin film substrates; Aluminum nitride; Ceramics; Costs; Nonhomogeneous media; Packaging; Research and development; Substrates; Thermal conductivity; Thermal expansion; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 1999. Proceedings. International Symposium on
Conference_Location :
Braselton, GA
Print_ISBN :
0-930815-56-4
Type :
conf
DOI :
10.1109/ISAPM.1999.757300
Filename :
757300
Link To Document :
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