DocumentCode :
270222
Title :
Interpreting area of pinched memristor hysteresis loop
Author :
Biolek, Dalibor ; Biolek, Zdenek ; Biolková, V.
Author_Institution :
Dept. of Electr. Eng./Microelectron., Univ. of Defence, Brno, Czech Republic
Volume :
50
Issue :
2
fYear :
2014
fDate :
January 16 2014
Firstpage :
74
Lastpage :
75
Abstract :
It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity `content´, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area below the v-i characteristic of the memristor: one is related to the power conditions and the other to the instantaneous state of the memristor memory. It is demonstrated for a memristor driven by the sinusoidal current that the power part of the content depends on the fundamental harmonic of the voltage, whereas the memory part of the content is given only by the higher harmonics of the voltage, and only by the even harmonics in the case of entirely closed loops. The analogous conclusions also hold for the voltage-controlled memristor.
Keywords :
memristors; nonlinear systems; current-controlled ideal memristor; memristor memory; nonlinear systems; pinched memristor hysteresis loop; sinusoidal current; voltage-controlled memristor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.3108
Filename :
6729317
Link To Document :
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