Thermal characterization of a high power infrared emitter as a function of input current

In this paper, thermal characterization of a high power infrared emitter as a function of input current is reported. Thermal behavior of the high power infrared emitter is investigated by employing thermal transient method. For measurement, input current is varied from 0.2A to 1.0A at constant ambient temperature of 27°C under still-air environment. It is found that junction-to-interface thermal resistance, Rth_JI of the high power infrared emitter increases from 2.50 KfW to 3.17 K/W with the increase of input current from 0.2A to 1.0A at an ambient temperature of 27°C. From the findings, increase of junction-to-interface thermal resistance, Rth_JI for the high power infrared emitter as a function of input current is due to the variation of optical efficiency with input current as presented in this paper.