DocumentCode
2702591
Title
Characterization of 28Si+ implantation induced damage in SIMOX
Author
Knudsen, John F. ; Adams, Pad M. ; Bowman, Robert C., Jr. ; Smith, Duane D. ; Moss, Steven C.
Author_Institution
Aerosp. Corp., El Segundo, CA, USA
fYear
1989
fDate
3-5 Oct 1989
Firstpage
150
Lastpage
151
Abstract
Summary form only given. Damage induced by ion implantation in SIMOX (separation by implantation of oxygen) wafers is measured and compared with similar implants in bulk Si. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering data show that the implant amorphization threshold is >1E14 and <3E14. Damage induced by a 1E14 implant in SIMOX material can be removed by annealing. However, damage produced by a 3E14 implant is unlikely to be removed by annealing for lack of a seed. Devices relying on ion implantation to modify SIMOX characteristics must take these amorphization effects into consideration
Keywords
Raman spectra of inorganic solids; Rutherford backscattering; X-ray diffraction examination of materials; annealing; elemental semiconductors; ion beam effects; ion implantation; reflectivity; silicon; time resolved spectra; Raman spectroscopy; Rutherford backscattering; SIMOX wafers; Si:O, Si; X-ray diffraction; annealing; implant amorphization threshold; ion implantation; photoreflectance; radiation damage; semiconductor; separation by implantation of O; time resolved spectroscopy; Implants; Laser excitation; Optical pulses; Pulse measurements; Pump lasers; Raman scattering; Reflectivity; Tensile strain; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location
Stateline, NV
Type
conf
DOI
10.1109/SOI.1989.69823
Filename
69823
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