DocumentCode :
2702633
Title :
Improved characteristics of bottom-emitting, oxide-confined, polyimide-wrapped VCSELs
Author :
Al-Omari, A.N.
Author_Institution :
Electron. Eng. Dept., Yarmouk Univ., Irbid, Jordan
fYear :
2011
fDate :
17-19 Oct. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Bottom-emitting, 980-nm vertical-cavity surface-emitting lasers flip-chip bonded on copper- and indium- plated heat spreaders were fabricated and characterized. Flip-chip bonding bottom-emitting VCSELs reduced the devices´ thermal resistance by 35% and increased the bias current density at which the maximum output optical power achieved by 19%, which increased the maximum output optical power achieved by 26%. Bonded VCSELs with oxide aperture diameters of 20-μm exhibited about 34°C decrease in active region temperature. Bonded and unbonded devices with different oxide aperture diameters demonstrated a threshold current density and slope efficiency of ~ 0.9kA/cm2 and 0.72W/A, respectively.
Keywords :
copper; flip-chip devices; heat sinks; indium; surface emitting lasers; thermal resistance; Cu; In; bottom emitting VCSEL; flip chip bond; oxide aperture; oxide confined VCSEL; plated heat spreader; polyimide wrapped VCSEL; size 20 mum; thermal resistance; vertical cavity surface emitting lasers; wavelength 980 nm; Bonding; Mathematical model; Optical device fabrication; Optical imaging; Stimulated emission; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics (ICP), 2011 IEEE 2nd International Conference on
Conference_Location :
Kata Kinabalu
Print_ISBN :
978-1-61284-265-3
Electronic_ISBN :
978-1-61284-263-9
Type :
conf
DOI :
10.1109/ICP.2011.6106859
Filename :
6106859
Link To Document :
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