DocumentCode :
2702690
Title :
Optimization of diode end-pumped Nd∶YVO4 laser
Author :
Krishnan, Ganesan ; Khamsan, Nur Ezaan ; Bidin, Noriah
Author_Institution :
Laser Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
fYear :
2011
fDate :
17-19 Oct. 2011
Firstpage :
1
Lastpage :
3
Abstract :
Diode end pumped Nd:YVO4 laser was optimized based on the variation of doping levels and crystal lengths of the gain mediums. The investigation of the doping level was including of 0.5, 1.0 and 1.5 at % of neodymium ions at constant length of 1 mm. Meanwhile, the crystal length were studied in the range of 1 mm, 3 mm and 10 mm at constant doping level of 1 at % Nd:YVO4 laser.
Keywords :
neodymium; optical pumping; semiconductor lasers; solid lasers; yttrium compounds; YVO4:Nd; crystal lengths; diode end-pumped laser; doping levels; wavelength 1 mm; wavelength 10 mm; wavelength 3 mm; Couplers; Crystals; Laser excitation; Power lasers; Pump lasers; Semiconductor lasers; Nd∶YVO4; crystal length; diode laser; doping level; pumped power; slope efficiency; threshold;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics (ICP), 2011 IEEE 2nd International Conference on
Conference_Location :
Kata Kinabalu
Print_ISBN :
978-1-61284-265-3
Electronic_ISBN :
978-1-61284-263-9
Type :
conf
DOI :
10.1109/ICP.2011.6106861
Filename :
6106861
Link To Document :
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