Title :
InGaAsP/InGaAs Quantum Well Lasers using Hollow Square Microcavities
Author :
Moon, Hee-Jong ; Jin, You-Yong ; Hyun, Kyung-Sook ; Kwon, Yong-Hwan
Author_Institution :
Dept. of Opt. Eng., Sejong Univ., Seoul
Abstract :
We investigated semiconductor lasers using hollow square microcavities with various corner shapes. For hollow square cavities with 45deg-tilted or convex-shaped corners, the ring-type WGMs originating total reflection of light at 4 corners were lased. While the lasing modes from a hollow cavity with concave-shaped asymmetric corners were 12 bounce guided modes originating total reflection at both (inner and outer) flat boundaries. We confirmed the lasing of guided modes by analyzing reduced mode spacing. The quality factor was smaller than that of ring-type WGMs due to the enhanced reflection loss
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; gallium compounds; indium compounds; laser modes; light reflection; microcavity lasers; optical losses; quantum well lasers; waveguide lasers; whispering gallery modes; InGaAsP-InGaAs; InGaAsP-InGaAs lasers; bounce guided modes; concave-shaped asymmetric corners; convex-shaped corners; guided mode lasing; hollow square microcavities; lasing modes; mode spacing; quality factor; quantum well lasers; reflection loss; ring-type whispering gallery modes; semiconductor lasers; total light reflection; total reflection; Etching; Geometry; Indium gallium arsenide; Laser modes; Microcavities; Optical reflection; Optical resonators; Quantum well lasers; Semiconductor lasers; Shape control; guided modes; hollow square cavity; mode spacing; semiconductor laser; whispering gallery modes;
Conference_Titel :
Transparent Optical Networks, 2006 International Conference on
Conference_Location :
Nottingham
Print_ISBN :
1-4244-0235-2
Electronic_ISBN :
1-4244-0236-0
DOI :
10.1109/ICTON.2006.248542
