DocumentCode
2702787
Title
Electromigration resistance of TiN-layered Ti-doped Al interconnects
Author
Atakov, Eugenia M.
Author_Institution
Digital Equipment Corp., Hudson, MA, USA
fYear
1990
fDate
12-13 Jun 1990
Firstpage
360
Lastpage
362
Abstract
The electromigration performance of 2-μm-wide, 17-mm-long single-layer and TiN-layered Al interconnects was studied. Al-1%Si-0.15%Ti and Al-0.15%Ti-based films were sputter deposited at 200-300°C and 475°C substrate temperatures, respectively. The interconnect lifetime improved dramatically when Al-0.15% Ti alloy was used instead of Al-1%Si-0.15%Ti. A TiN underlayer reduced the Al alloy EM resistance, except when the TiN was exposed to air prior to Al deposition
Keywords
aluminium alloys; circuit reliability; electromigration; integrated circuit technology; metallisation; sputtered coatings; titanium alloys; titanium compounds; 200 to 300 degC; 475 degC; AlSiTi; TiN-AlTi; TiN-layered Al interconnects; VLSI; interconnect lifetime; substrate temperatures; Condition monitoring; Current density; Degradation; Electromigration; Laminates; Packaging; Stress; Temperature; Testing; Tin alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location
Santa Clara, CA
Type
conf
DOI
10.1109/VMIC.1990.127897
Filename
127897
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