Title :
Effect of ion species for the surface activated bonding of GaAs wafers on the characteristics of the bonded interfaces
Author :
Kono, Genki ; Fujino, Masahisa ; Yamashita, Daiji ; Watanabe, Kentaroh ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Suga, Tadatomo
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I-V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were employed for FAB source. We confirm that it is possible to reduce the interfacial damage and improve the conductivity of GaAs/GaAs bonded interface by changing the ion species for FAB irradiation.
Keywords :
III-V semiconductors; electric current measurement; electrical conductivity; gallium arsenide; transmission electron microscopy; voltage measurement; wafer bonding; FAB irradiation; GaAs-GaAs; Ne-Ar-Kr-Xe; SAB; TEM observations; bonded interfaces; conductivity improvement; current-voltage measurements; fast atom beam irradiation; interfacial damage reduction; ion specie effect; surface activated bonding; transmission electron microscopy; wafers characteristics; Bonding; Conductivity; Gallium arsenide; Iron; Radiation effects; Surface treatment; Xenon; Fast atom beam; GaAs; Surface activated bonding; Wafer direct bonding;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111062
