Directional Emission Patterns from the Oval-Billiard Microcavity Laser Diodes

Author

Tanaka, Tomoko ; Hentschel, Martina ; Fukushima, Takehiro ; Harayama, Takahisa

Author_Institution

Dept. of Nonlinear Sci., ATR Wave Eng. Lab., Kyoto

Volume

4

fYear

2006

fDate

18-22 June 2006

Firstpage

121

Lastpage

123

Abstract

We investigate the lasing characteristics of oval-resonator laser diodes made of AlGaAs/GaAs quantum wells both experimentally and theoretically. The resonator shapes are various oval geometries, thereby probing chaotic and mixed classical dynamics. The far field pattern shows a pronounced fine structure that strongly depends on the cavity shape

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; microcavity lasers; optical chaos; quantum well lasers; stimulated emission; AlGaAs-GaAs; AlGaAs-GaAs quantum wells; chaotic dynamics probing; directional emission patterns; far field pattern; laser diodes; lasing characteristics; mixed classical dynamics probing; oval geometries; oval-billiard microcavity; oval-resonator laser; resonator shapes; Chaotic communication; Diode lasers; Extraterrestrial measurements; Gallium arsenide; Geometrical optics; Microcavities; Numerical simulation; Shape; Stationary state; Testing; laser diode; microcavity;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2006 International Conference on

Conference_Location

Nottingham

Print_ISBN

1-4244-0235-2

Electronic_ISBN

1-4244-0236-0

Type

conf

DOI

10.1109/ICTON.2006.248453

Filename

4013907