Title :
Dielectric film influence on stress-migration
Author :
Isobe, Atsuo ; Okamura, K. ; Ogura, S. ; Mizuno, O.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The purpose of this work is to clarify the relation between dielectric film characteristics and stress migration (SM). It has been considered that the dielectric-deposition-temperature-induced stress, caused by the difference of the expansion coefficients for Al, is the main factor for SM. However, it was found that Al diffusion into dielectrics, Al recrystallization, and dielectrics flexibility are also significant for SM. It is shown that the best method of dielectrics formation against SM is depositing low-Al-diffusivity dielectrics at low temperature after stress relaxation
Keywords :
dielectric thin films; integrated circuit technology; metallisation; stress relaxation; thermal stresses; Al; Al diffusion; Al recrystallization; dielectric coated interconnects; dielectric film characteristics; dielectric-deposition-temperature-induced stress; expansion coefficients; low temperature deposition; low-Al-diffusivity dielectrics; stress relaxation; stress-migration; Annealing; Artificial intelligence; Compressive stress; Dielectric films; Dielectric materials; National electric code; Samarium; Temperature; Tensile stress; Wiring;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127898
