Dielectric film influence on stress-migration

Author

Isobe, Atsuo ; Okamura, K. ; Ogura, S. ; Mizuno, O.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1990

fDate

12-13 Jun 1990

Firstpage

363

Lastpage

364

Abstract

The purpose of this work is to clarify the relation between dielectric film characteristics and stress migration (SM). It has been considered that the dielectric-deposition-temperature-induced stress, caused by the difference of the expansion coefficients for Al, is the main factor for SM. However, it was found that Al diffusion into dielectrics, Al recrystallization, and dielectrics flexibility are also significant for SM. It is shown that the best method of dielectrics formation against SM is depositing low-Al-diffusivity dielectrics at low temperature after stress relaxation

Keywords

dielectric thin films; integrated circuit technology; metallisation; stress relaxation; thermal stresses; Al; Al diffusion; Al recrystallization; dielectric coated interconnects; dielectric film characteristics; dielectric-deposition-temperature-induced stress; expansion coefficients; low temperature deposition; low-Al-diffusivity dielectrics; stress relaxation; stress-migration; Annealing; Artificial intelligence; Compressive stress; Dielectric films; Dielectric materials; National electric code; Samarium; Temperature; Tensile stress; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127898

Filename

127898