Title :
Base digital schemes on complementary bipolar transistors
Author :
Alimova, N.B. ; Aripova, Z. Kh ; Toshmatov, Sh T.
Author_Institution :
Tashkent Univ. of Inf. Technol., Tashkent, Uzbekistan
Abstract :
A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.
Keywords :
bipolar transistors; base digital schemes; complementary bipolar transistors; contact potential difference; digital electronic elements; electronic switching cells; injection-voltaic mode; power supply voltage; Bipolar transistors; Electric potential; Junctions; Optical switches; Power supplies; Switching circuits; Transistors; CBT; injection-voltaic effect;
Conference_Titel :
Application of Information and Communication Technologies (AICT), 2010 4th International Conference on
Conference_Location :
Tashkent
Print_ISBN :
978-1-4244-6903-1
Electronic_ISBN :
978-1-4244-6904-8
DOI :
10.1109/ICAICT.2010.5612004
