DocumentCode
2703030
Title
Base digital schemes on complementary bipolar transistors
Author
Alimova, N.B. ; Aripova, Z. Kh ; Toshmatov, Sh T.
Author_Institution
Tashkent Univ. of Inf. Technol., Tashkent, Uzbekistan
fYear
2010
fDate
12-14 Oct. 2010
Firstpage
1
Lastpage
3
Abstract
A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.
Keywords
bipolar transistors; base digital schemes; complementary bipolar transistors; contact potential difference; digital electronic elements; electronic switching cells; injection-voltaic mode; power supply voltage; Bipolar transistors; Electric potential; Junctions; Optical switches; Power supplies; Switching circuits; Transistors; CBT; injection-voltaic effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Application of Information and Communication Technologies (AICT), 2010 4th International Conference on
Conference_Location
Tashkent
Print_ISBN
978-1-4244-6903-1
Electronic_ISBN
978-1-4244-6904-8
Type
conf
DOI
10.1109/ICAICT.2010.5612004
Filename
5612004
Link To Document