DocumentCode
2703591
Title
Transient and frequency analysis of PIN avalanche photodetector using circuit model
Author
Jalali, Mohammad ; Soroosh, M. ; Farshi, M. K Moravvej ; Nabavi, A.R.
Author_Institution
Opt. Tech. Lab., Tarbiat Modares Univ., Tehran
fYear
2005
fDate
15-17 Sept. 2005
Firstpage
294
Lastpage
296
Abstract
This paper tries to characterize the PIN and avalanche photodiode (APD) in time and frequency domain using the circuit simulation in Spice. For this reason a circuit model of PIN avalanche diodes based on carrier rate equations has been considered. This model is able to pretend dc, ac, and transient response of diode. We contemplate the effects of variation in bias voltage and optical power on frequency and transient response
Keywords
avalanche photodiodes; circuit simulation; frequency-domain analysis; p-i-n photodiodes; photodetectors; transient analysis; APD; PIN avalanche photodetector; Spice; bias voltage; carrier rate equation; circuit model; circuit simulation; diode transient response; frequency analysis; frequency domain; optical power; time domain; transient analysis; Avalanche photodiodes; Circuit simulation; Diodes; Frequency; Impact ionization; Optical pulses; Photodetectors; Transient analysis; Transient response; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on
Conference_Location
Yalta, Crimea
Print_ISBN
0-7803-9147-0
Type
conf
DOI
10.1109/LFNM.2005.1553250
Filename
1553250
Link To Document