DocumentCode
2703604
Title
Modeling of the semiconductor devices with the IET and involving the impact ionization
Author
Prokhorov, E.D. ; Pavlenko, D.V.
Author_Institution
V.N.Karazin Kharkiv Nat. Univ., Kharkov
fYear
2005
fDate
15-17 Sept. 2005
Firstpage
297
Lastpage
300
Abstract
The approach to build-up of a numerical model of semiconductor devices on basis of the electron transfer effect is offered in view of the impact ionization, providing stability of an iterative process at origin of the considerable excess concentration of generated by the impact ionization charge carriers
Keywords
Poisson equation; convergence of numerical methods; electron-hole recombination; impact ionisation; iterative methods; semiconductor device models; charge carrier; convergence; electron-hole recombination; impact ionization; intervalley electron transfer effect; iterative process; microwave noise; semiconductor device modeling; Charge carrier processes; Charge carriers; Electrons; Gunn devices; Impact ionization; Iterative methods; Numerical models; Poisson equations; Semiconductor devices; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on
Conference_Location
Yalta, Crimea
Print_ISBN
0-7803-9147-0
Type
conf
DOI
10.1109/LFNM.2005.1553251
Filename
1553251
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