Resonant tunneling technology for mixed signal and digital circuits in the 10-100 GHz domain

Author

Broekaert, T.P.E. ; Brar, B. ; Morris, F. ; Seabaugh, A.C. ; Frazier, G.

Author_Institution

Raytheon Syst. Co., Dallas, TX, USA

fYear

1999

fDate

4-6 Mar 1999

Firstpage

123

Lastpage

126

Abstract

The inherent bistability and picosecond time-scale switching of the resonant tunneling diode (RTD) provides an ideal element for the design of digital circuits and analog signal quantizers in the 10-100 GHz domain. New differential RTD-based circuits for quantizers and a first-order sigma-delta modulator capable of operating at 10 GHz and beyond are introduced

Keywords

HEMT integrated circuits; circuit stability; mixed analogue-digital integrated circuits; quantisation (signal); resonant tunnelling diodes; sigma-delta modulation; 10 to 100 GHz; bistability; differential RTD/HEMT based circuits; first-order sigma-delta modulator; mixed signal circuits; picosecond time-scale switching; resonant tunneling technology; signal quantizers; Bridge circuits; Clocks; Digital circuits; FETs; HEMTs; Logic; MODFETs; Resonant tunneling devices; Sampling methods; Shift registers;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on

Conference_Location

Ypsilanti, MI

ISSN

1066-1395

Print_ISBN

0-7695-0104-4

Type

conf

DOI

10.1109/GLSV.1999.757392

Filename

757392

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2703637