Title :
Resonant tunneling technology for mixed signal and digital circuits in the 10-100 GHz domain
Author :
Broekaert, T.P.E. ; Brar, B. ; Morris, F. ; Seabaugh, A.C. ; Frazier, G.
Author_Institution :
Raytheon Syst. Co., Dallas, TX, USA
Abstract :
The inherent bistability and picosecond time-scale switching of the resonant tunneling diode (RTD) provides an ideal element for the design of digital circuits and analog signal quantizers in the 10-100 GHz domain. New differential RTD-based circuits for quantizers and a first-order sigma-delta modulator capable of operating at 10 GHz and beyond are introduced
Keywords :
HEMT integrated circuits; circuit stability; mixed analogue-digital integrated circuits; quantisation (signal); resonant tunnelling diodes; sigma-delta modulation; 10 to 100 GHz; bistability; differential RTD/HEMT based circuits; first-order sigma-delta modulator; mixed signal circuits; picosecond time-scale switching; resonant tunneling technology; signal quantizers; Bridge circuits; Clocks; Digital circuits; FETs; HEMTs; Logic; MODFETs; Resonant tunneling devices; Sampling methods; Shift registers;
Conference_Titel :
VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on
Conference_Location :
Ypsilanti, MI
Print_ISBN :
0-7695-0104-4
DOI :
10.1109/GLSV.1999.757392
