Ultra-thin quantum wells and fractional monolayer quantum dots of II-IV semiconductors for optoelectronic applicatons

Author

Bernandez-Calderon, I. ; Alfaro-Martínez, A. ; García-Rocha, M.

Author_Institution

Phys. Dept., CINVESTAV, Mexico City

fYear

2005

fDate

15-17 Sept. 2005

Firstpage

320

Lastpage

324

Abstract

CdTe/ZnTe and CdSe/ZnSe ultra-thin quantum wells (UTQW) with thickness of few monolayers present very strong excitonic emission and can be combined to cover the red-blue spectral range. They are grown by atomic layer epitaxy and the emission from thickness fluctuations can be completely avoided in many cases by choosing the appropriate growth parameters. Submonolayer coverage of CdSe produces fractional monolayer quantum dots (FMQD) which present very narrow blue emission, indicating a high degree of uniformity in size and shape. These UTQWs and FMQDs appear as promising candidates for the elaboration of red to blue light emission devices based on II-VI compounds

Keywords

II-VI semiconductors; atomic layer epitaxial growth; cadmium compounds; excitons; monolayers; optoelectronic devices; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; zinc compounds; CdSe-ZnSe; CdTe-ZnTe; II-VI semiconductor; atomic layer epitaxy; excitonic emission; fractional monolayer quantum dot; light emission device; optoelectronic application; photoluminescence; red-blue spectral range; submonolayer coverage; thickness fluctuation; ultrathin quantum well; Atomic layer deposition; Buffer layers; Epitaxial growth; Fluctuations; Quantum dots; Shape; Substrates; Surface reconstruction; US Department of Transportation; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on

Conference_Location

Yalta, Crimea

Print_ISBN

0-7803-9147-0

Type

conf

DOI

10.1109/LFNM.2005.1553257

Filename

1553257