Application of the flip-chip bonding technique to the 10 Gbps laser diode module

Author

Dong Goo Kim ; Haksoo Han ; Seong Su Park ; Gwanchong Joo

Author_Institution

Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Taejeon, South Korea

fYear

1995

fDate

21-24 May 1995

Firstpage

872

Lastpage

875

Abstract

Flip chip bonding technique using Pb/In solder bumps was applied to packaging a 10 Gbps laser diode (LD) submodule for high-speed optical communication systems. Dependence of parasitic parameters on the small signal modulation bandwidth of the LD submodule was investigated through SPICE simulations. Experimentally, a small signal modulation bandwidth of 14 GHz at 100 mA dc bias current and the clean modulation response up to 20 GHz were obtained in the flip-chip bonded LD submodule, which was wider than that of the wire-bonded 10 Gbps LD submodule by a difference of 3.8 GHz

Keywords

SPICE; digital simulation; flip-chip devices; optical communication equipment; optical modulation; semiconductor device packaging; semiconductor lasers; soldering; 10 Gbit/s; 100 mA; 14 GHz; PbIn; SPICE simulation; clean modulation response; flip-chip bonding technique; high-speed optical communication systems; laser diode module; parasitic parameters; small signal modulation bandwidth; solder bumps; Bandwidth; Bonding; Diode lasers; Electronics packaging; Flip chip; High speed optical techniques; Inductance; Optical modulation; SPICE; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1995. Proceedings., 45th

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2736-5

Type

conf

DOI

10.1109/ECTC.1995.517790

Filename

517790