• DocumentCode
    2703997
  • Title

    High performance GaAs/AlGaAs vertical-cavity surface-emitting lasers designed for cryogenic applications

  • Author

    Lu, BO ; Luo, Wen-Lin ; Cheng, Julian ; Schneider, R.P. ; Kilcoyne, S.P. ; Lear, K.L. ; Zolper, J.C.

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • fYear
    1995
  • fDate
    21-24 May 1995
  • Firstpage
    949
  • Lastpage
    951
  • Abstract
    The slope efficiency (ηs) and the output power (P out) of proton-implant-isolated AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) improve dramatically as the temperature is decreased, with ηs>90% at 77 K, compared to η s≈20% at room temperature. This suggests that the VCSEL can be a very efficient device for cryogenic applications. In this paper we report the first VCSEL that has been optimized for operation near 77 K, with characteristics that are superior to those of VCSELs operating at room temperature, including high output power (Pout=22 mW), high power conversion efficiency (ηd=32%), high slope efficiency (ηs=75%-95%), low threshold voltage (V th=1.75 V) and current (Ith=2 mA), and low power dissipation (Pd<10 mW for Pout=2.5 mW) for a 20 μm diameter device
  • Keywords
    III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; laser cavity resonators; semiconductor lasers; surface emitting lasers; 1.75 V; 2 mA; 20 micron; 22 mW; 32 percent; 75 to 95 percent; 77 K; AlGaAs-GaAs; VCSEL; cryogenic applications; high power conversion efficiency; low power dissipation; low threshold voltage; output power; proton-implant-isolated device; slope efficiency; surface-emitting lasers; vertical-cavity SEL; Cryogenics; Gallium arsenide; Power conversion; Power generation; Power lasers; Surface emitting lasers; Temperature; Threshold voltage; Time of arrival estimation; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1995. Proceedings., 45th
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-2736-5
  • Type

    conf

  • DOI
    10.1109/ECTC.1995.517804
  • Filename
    517804