Experimental demonstration and modelling of optoelectronic mixing and digital modulation in a single InP photo heterojunction bipolar transistor

Author

Bilenca, A. ; Lasri, J. ; Eisenstein, G. ; Ritter, D. ; Orenstein, M. ; Sidorov, V. ; Cohen, S. ; Goldgeier, P.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

2000

fDate

2000

Firstpage

203

Lastpage

206

Abstract

We describe microwave signal generation and digital modulation by optoelectronic mixing in a single InGaAs-InP heterojunction bipolar phototransistor. Modeling and experimental verification are demonstrated for 10 and 45 GHz signals modulated at rates up to 2.5 Gb/s

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave generation; microwave mixers; microwave photonics; modulation; modulators; optical communication equipment; phototransistors; semiconductor device models; transceivers; 10 GHz; 2.5 Gbit/s; 45 GHz; InGaAs-InP; InGaAs/InP photo-HBT; InP photo heterojunction bipolar transistor; WDM systems; digital modulation; heterojunction bipolar phototransistor; microwave signal generation; modelling; optoelectronic mixing; phased arrays; radio on fibre communication; Digital modulation; Fiber nonlinear optics; Frequency; Heterojunction bipolar transistors; Mathematical model; Microwave generation; Nonlinear optics; Optical mixing; Optical modulation; Signal generators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2000. MWP 2000. International Topical Meeting on

Conference_Location

Oxford

Print_ISBN

0-7803-6455-4

Type

conf

DOI

10.1109/MWP.2000.889823

Filename

889823