Transistor-only frequency-selective circuits

Author

Pu, Lih-Jiuan ; Tsividis, Yannis

Author_Institution

Dept. of Electr. Eng. & Center for Telecommun. Res., Columbia Univ., New York, NY, USA

fYear

1988

fDate

7-9 June 1988

Firstpage

2851

Abstract

The distributed characteristics of an MOS transistor operated in the strong inversion nonsaturation region are summarized, including small-signal characteristics and large-signal nonlinearities. A procedure for converting an active distributed RC circuit to a transistor-only circuit is introduced. Preliminary experimental results for a 100-MHz lowpass filter test chip are presented. The experimental results obtained are encouraging in showing the potential of implementing noncritical transistor-only filters and oscillators as part of VLSI chips fabricated using ´digital´ technologies in which transistors are the only available circuit elements.<>

Keywords

MOS integrated circuits; VLSI; active filters; band-pass filters; integrating circuits; low-pass filters; 100 MHz; MOS transistor; VLSI chips; active distributed RC circuit; active filters; band-pass type; distributed characteristics; frequency-selective circuits; integrators; large-signal nonlinearities; lowpass filter test chip; small-signal characteristics; strong inversion nonsaturation region; transistor-only circuit; Active filters; Digital circuits; Equations; Frequency; MOSFET circuits; Parasitic capacitance; VHF circuits; Very large scale integration; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo, Finland

Type

conf

DOI

10.1109/ISCAS.1988.15533

Filename

15533