DocumentCode
2704567
Title
A multilevel cache memory architecture for nanoelectronics
Author
Crawley, David
Author_Institution
Dept. of Phys. & Astron., Univ. Coll. London, UK
fYear
1999
fDate
4-6 Mar 1999
Firstpage
346
Lastpage
347
Abstract
In this paper, the author presents a new multilevel cache memory architecture which uses only near-neighbour connections, thus eliminating long tracks and rendering the system suitable for nanoelectronic implementation. Operation of the memory is such that the most-recently accessed data is kept closest to the read-write port
Keywords
cache storage; integrated memory circuits; memory architecture; nanotechnology; multilevel cache memory architecture; nanoelectronic implementation; near-neighbour connections; Astronomy; Cache memory; Educational institutions; Electrical capacitance tomography; Image processing; Memory architecture; Nanoelectronics; Physics; Propagation delay; Read-write memory;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on
Conference_Location
Ypsilanti, MI
ISSN
1066-1395
Print_ISBN
0-7695-0104-4
Type
conf
DOI
10.1109/GLSV.1999.757453
Filename
757453
Link To Document