• DocumentCode
    2704817
  • Title

    Flip chip attachment of silicon devices using substrate ball bumping and the technology evaluation on test assemblies for 20 Gbit/s transmission

  • Author

    Eldring, J. ; Koeffers, K. ; Richter, H. ; Baumgartner, A. ; Reichl, H.

  • Author_Institution
    Inst. Technologien der Mikroperipherik, Tech. Univ. Berlin, Germany
  • fYear
    1995
  • fDate
    21-24 May 1995
  • Firstpage
    1209
  • Lastpage
    1216
  • Abstract
    Ball bumping is a fast and flexible method for bumping of single devices because only a modified wire bonding machine can be used. In this paper the flip chip TC-attach of silicon devices using substrate gold ball bumping was investigated. The results show that thermal compression flip chip attachment between the aluminum pad metallization and gold ball bumps can be achieved. The interconnection was characterized by infrared microscopy and shear testing. To demonstrate the capability of the technology developed, flip chip test assemblies with silicon bipolar ICs for high speed signal transmission were realized. The assemblies were investigated by TDR (Time Domain Reflectometry), reflection-loss and eye-pattern measurements and compared to wire bond species. As a result of these investigations it was found, that the flip chip technology developed in this paper can be used and is an excellent approach especially for rapid prototyping. With the test assemblies realized, 20 Gbit/s signal transmission could be demonstrated successfully
  • Keywords
    bipolar integrated circuits; flip-chip devices; integrated circuit testing; lead bonding; optical microscopy; shear strength; 20 Gbit/s; Si; bipolar ICs; eye-pattern measurements; flip chip TC-attach; flip chip attachment; infrared microscopy; pad metallization; rapid prototyping; reflection loss; shear testing; substrate ball bumping; test assemblies; thermal compression flip chip attachment; time domain reflectometry; wire bonding machine; Aluminum; Assembly; Bonding; Flip chip; Gold; Metallization; Microscopy; Silicon devices; Testing; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1995. Proceedings., 45th
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-2736-5
  • Type

    conf

  • DOI
    10.1109/ECTC.1995.517844
  • Filename
    517844