Title :
Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates
Author :
Brooks, K.G. ; Kohli, M. ; Taylor, D.V. ; Maeder, T. ; Reaney, I. ; Kholkin, A. ; Muralt, P. ; Setter, N.
Author_Institution :
Lab. de Ceramique, Ecole Polytech. Fed. de Lausanne, Switzerland
Abstract :
Pb(Zr1-xTix)O3 thin films (x=0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x=0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x=0.55 films, square P-E hysteresis loops were obtained with: Pr=36 μC/cm2, and Ec=45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 μm thick Pb(Zr0.15 Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties
Keywords :
dielectric hysteresis; ferroelectric thin films; lead compounds; piezoceramics; pyroelectricity; sol-gel processing; thermal stresses; PZT; PZT thin film; PbZrO3TiO3; ZrO2; ceramic ZrO2 substrate; hysteresis loop; pyroelectric figures of merit; sol-gel deposition; texture; thermal stress; Ceramics; Hysteresis; Pyroelectricity; Semiconductor films; Sputtering; Substrates; Thermal expansion; Thermal stresses; Thickness measurement; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598059
