DocumentCode
2704991
Title
Selective and nonselective deposition of aluminum by LPCVD using DMAH and microregion observation of single crystal aluminum with scanning μ-RHEED microscope
Author
Tsubouchi, K. ; Masu, Kazuya ; Shigeeda, N. ; Matano, T. ; Hiura, Y. ; Mikoshiba, N. ; Matsumoto, S. ; Asaba, T. ; Marui, T. ; Kajikawa, T.
fYear
1990
fDate
4-7 June 1990
Firstpage
5
Lastpage
6
Abstract
A controllable method is described for the selective or nonselective growth of high-quality Al on Si(100), Si(111) and TiN versus SiO2 by low-pressure chemical vapor deposition (LPCVD) using a dimethylaluminum hydride (DMAH) source. The selectivity deposited Al on Si surface was confirmed to be single-crystal by microregion observation with a scanning μ-RHEED microscope. The authors produced high quality hillock-free and alloy-spike-free aluminum on Si, TiN and SiO2 with potential application to VLSI fabrication
Keywords
VLSI; aluminium; chemical vapour deposition; metallisation; reflection high energy electron diffraction; Al deposition; Al-Si; Al-SiO2; Al-TiN; DMAH; LPCVD; Si; SiO2; TiN; VLSI fabrication; alloy-spike-free; dimethylaluminum hydride; hillock-free; low-pressure chemical vapor deposition; microregion observation; nonselective growth; scanning micro RHEED microscopy; selective deposition; single crystal Al;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location
Honolulu, Hawaii, USA
Type
conf
DOI
10.1109/VLSIT.1990.110980
Filename
5727440
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