Title :
Selective and nonselective deposition of aluminum by LPCVD using DMAH and microregion observation of single crystal aluminum with scanning μ-RHEED microscope
Author :
Tsubouchi, K. ; Masu, Kazuya ; Shigeeda, N. ; Matano, T. ; Hiura, Y. ; Mikoshiba, N. ; Matsumoto, S. ; Asaba, T. ; Marui, T. ; Kajikawa, T.
Abstract :
A controllable method is described for the selective or nonselective growth of high-quality Al on Si(100), Si(111) and TiN versus SiO2 by low-pressure chemical vapor deposition (LPCVD) using a dimethylaluminum hydride (DMAH) source. The selectivity deposited Al on Si surface was confirmed to be single-crystal by microregion observation with a scanning μ-RHEED microscope. The authors produced high quality hillock-free and alloy-spike-free aluminum on Si, TiN and SiO2 with potential application to VLSI fabrication
Keywords :
VLSI; aluminium; chemical vapour deposition; metallisation; reflection high energy electron diffraction; Al deposition; Al-Si; Al-SiO2; Al-TiN; DMAH; LPCVD; Si; SiO2; TiN; VLSI fabrication; alloy-spike-free; dimethylaluminum hydride; hillock-free; low-pressure chemical vapor deposition; microregion observation; nonselective growth; scanning micro RHEED microscopy; selective deposition; single crystal Al;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.110980
